參數(shù)資料
型號: 2SK3457
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關(guān)N溝道功率MOSFET
文件頁數(shù): 2/8頁
文件大小: 77K
代理商: 2SK3457
Data Sheet D14754EJ1V0DS
2
2SK3457
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 800 V, V
GS
= 0 V
100
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
3.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 3.0 A
2.0
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 3.0 A
1.8
2.2
Input Capacitance
C
iss
V
DS
= 10 V
1220
pF
Output Capacitance
C
oss
V
GS
= 0 V
170
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
16
pF
Turn-on Delay Time
t
d(on)
V
DD
= 150 V, I
D
= 3.0 A
17
ns
Rise Time
t
r
V
GS
= 10 V
7
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
43
ns
Fall Time
t
f
11
ns
Total Gate Charge
Q
G
V
DD
= 450 V
24
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
5
nC
Gate to Drain Charge
Q
GD
I
D
= 5.0 A
10
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 5.0 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 5.0 A, V
GS
= 0 V
1310
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
μ
s
6.6
μ
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0 V
PG.
R
G
= 25
R
G
= 10
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1 s
Duty Cycle
1%
τ
V
GS
Wave Form
D
Wave Form
V
GS
I
D
10%
0
0
90%
90%
90%
V
GS
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
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