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參數資料
| 型號： | 2SK3447TZ-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁數： | 4/7頁 |
| 文件大?。?/td> | 80K |
| 代理商： | 2SK3447TZ-E |
2SK3447
Rev.7.00 Sep 07, 2005 page 4 of 6
5
1
2
3
4
–25
0
25
75
50
100 125
150
0
0.1
0.3
3
10
3
1
0.3
0.1
1
25°C
Tc = –25°C
75°C
0.5 A
0.2 A
0.5 A
0.2 A
ID = 1 A
Drain Current
ID (A)
Forward Transfer Admittance vs.
Drain Current
Forward
Transfer
Admittance
|y
fs
|
(S)
VDS = 10 V
Pulse Test
Case Temperature
Tc (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
0.1
0.3
1
3
10
1000
100
300
30
3
10
1
0
10203040
50
1000
300
30
100
160
120
80
40
0
16
24
6
8
10
0
4
12
8
100
30
1
3
10
0.1
0.3
1
3
10
1
3
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 1 A
VDS
VGS
VDD = 100 V
50 V
25 V
di / dt = 100 A /
s
VGS = 0, Ta = 25°C
tr
td(on)
td(off)
tf
VGS = 10 V, VDD = 30 V, Rg = 50
PW = 5
s, duty ≤ 1 %
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
trr
(ns)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
Capacitance
C
(pF)
Drain to Source Voltage
VDS (V)
Switching
Time
t
(ns)
Drain Current
ID (A)
Switching Characteristics
Gate Charge
Qg (nC)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
VDD = 100 V
50 V
25 V
10 V
VGS = 4 V
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相關代理商/技術參數 |
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|---|---|
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| 2SK3449 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH60V4.8ATO-126 |
| 2SK345 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 5A I(D) | TO-220AB |
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| 2SK3450-01SC | 制造商:Fuji Electric 功能描述: |
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