- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33499 > 2SK3447TZ-E 1000 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 PDF資料下載
參數(shù)資料
| 型號： | 2SK3447TZ-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 150 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 80K |
| 代理商： | 2SK3447TZ-E |
2SK3447
Rev.7.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
150
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
1
A
Drain peak current
ID (pulse)
Note 1
4
A
Body-drain diode reverse drain current
IDR
1
A
Channel dissipation
Pch
Note 2
0.9
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Ta = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
150
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
1
A
VDS = 150 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
1.0
—
2.5
V
VDS = 10 V, ID = 1 mA
RDS (on)
—
1.5
1.95
ID = 0.5 A, VGS = 10 V
Note 3
Static drain to source on state resistance
RDS (on)
—
1.9
2.5
ID = 0.5 A, VGS = 4 V
Note 3
Forward transfer admittance
|yfs|
0.5
0.9
—
S
ID = 0.5 A, VDS = 10 V
Note 3
Input capacitance
Ciss
—
85
—
pF
Output capacitance
Coss
—
36
—
pF
Reverse transfer capacitance
Crss
—
18
—
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Qg
—
4.5
—
nC
Gate to source charge
Qgs
—
0.8
—
nC
Gate to drain charge
Qgd
—
1.6
—
nC
VDD = 100 V
VGS = 10 V
ID = 1 A
Turn-on delay time
td (on)
—
7
—
ns
Rise time
tr
—
6
—
ns
Turn-off delay time
td (off)
—
21
—
ns
Fall time
tf
—
10
—
ns
VGS = 10 V
ID = 0.5 A
RL = 60
Body-drain diode forward voltage
VDF
—
1.0
1.5
V
IF = 1 A, VGS = 0
Note 3
Body-drain diode reverse recovery time
trr
—
60
—
ns
IF = 1 A, VGS = 0
diF/dt = 100 A/
s
Note:
3. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3451-01MR | 13 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3455-AZ | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3455 | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3455-AZ | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3457-AZ | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3448 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Use |
| 2SK3449 | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH60V4.8ATO-126 |
| 2SK345 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SK3450-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:STD MOSFET |
| 2SK3450-01SC | 制造商:Fuji Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。