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參數(shù)資料
| 型號： | 2SK3426G |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 0.46 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | ROHS COMPLIANT, SSSMINI3-F2, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 168K |
| 代理商： | 2SK3426G |
Silicon Junction FETs (Small Signal)
1
Publication date: May 2008
SJF00067BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SK3426G
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
■ Features
High mutual conductance g
m
Low noise voltage NV
■ Absolute Maximum Ratings T
a = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain current *
1
ID
VDS
= 2.0 V, R
D
= 2.2 k ± 1%
100
460
A
Drain-source current
IDSS
VDS = 2.0 V, RD= 2.2 k ± 1%, VGS = 0
107
470
A
Mutual conductance
gm
VD = 2.0 V, VGS = 0, f = 1 kHz
660
1 600
S
Noise voltage
NV
VD
= 2.0 V, R
D
= 2.2 k ± 1%
10
V
CO = 5 pF, A-Curve
Voltage gain
GV1
VD
= 2.0 V, R
D
= 2.2 k ± 1%
7.5
4.7
dB
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV2
VD
= 12 V, R
D
= 2.2 k ± 1%
4.0
1.5
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV3
VD
= 1.5 V, R
D
= 2.2 k ± 1%
8.0
5.0
CO = 5 pF, eG = 10 mV, f = 1 kHz
G
V. f
*
2
VD
= 2.0 V, R
D
= 2.2 k ± 1%
0
1.7
CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz
Voltage gain difference
G
V2
G
V1
0
4.0
dB
G
V1 GV3
0
1.7
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: ID is assured for IDSS.
*2:
G
V. f is assured for AQL 0.065%. (The measurement method is used by source-grounded circuit.)
Parameter
Symbol
Rating
Unit
Drain-source voltage (Gate open)
VDSO
20
V
Drain-gate voltage (Source open)
VDGO
20
V
Drain-source current (Gate open)
IDSO
2mA
Drain-gate current (Source open)
IDGO
2mA
Gate-source current (Drain open)
IGSO
2mA
Power dissipation
PD
100
mW
Operating ambient temperature
Topr
20 to +80
°C
Storage temperature
Tstg
55 to +125
°C
■ Package
Code
SSSMini3-F2
Pin Name
1: Drain
2: Source
3: Gate
■ Marking Symbol: 4E
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