參數(shù)資料
型號: 2SK3355-ZJ
元件分類: JFETs
英文描述: 83 A, 60 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: MP-25ZJ, 3 PIN
文件頁數(shù): 7/8頁
文件大?。?/td> 87K
代理商: 2SK3355-ZJ
Data Sheet D14132EJ5V0DS
7
2SK3355
PACKAGE DRAWINGS (Unit: mm)
1)
TO-220AB(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2)
TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3)
TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
4) TO-220SMD(MP-25Z)
Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TYP.
0.8R
TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
5
相關(guān)PDF資料
PDF描述
2SK3355-S 83 A, 60 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
2SK3355-AZ 83 A, 60 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3356 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3356-AZ 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3356-AZ 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
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