參數(shù)資料
型號(hào): 2SK3356
元件分類: JFETs
英文描述: 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-88, TO-3P, 3 PIN
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 67K
代理商: 2SK3356
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3356
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D14133EJ3V0DS00 (3rd edition)
Date Published
March 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark 5 shows major revised points.
DESCRIPTION
The 2SK3356 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 8.0 m
MAX. (VGS = 10 V, ID = 38 A)
RDS(on)2 = 12 m
MAX. (VGS = 4 V, ID = 38 A)
Low Ciss: Ciss = 6300 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS(AC)
±20
V
Drain Current (DC)
ID(DC)
±75
A
Drain Current (pulse)
Note1
ID(pulse)
±300
A
Total Power Dissipation (TC = 25°C)
PT1
135
W
Total Power Dissipation (TA = 25°C)
PT2
3.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
55
A
Single Avalanche Energy
Note2
EAS
302
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, VDD = 30 V
, RG = 25 , VGS = 20 V
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3356
TO-3P
(TO-3P)
相關(guān)PDF資料
PDF描述
2SK3356-AZ 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3356-AZ 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3359 70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3365-AZ 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
2SK3365-AZ 30000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
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參數(shù)描述
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