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參數(shù)資料
| 型號(hào)： | 2SK3326B-S17-AY |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大?。?/td> | 257K |
| 代理商： | 2SK3326B-S17-AY |
Data Sheet D18430EJ2V0DS
6
2SK3326B
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
I
AS
-
Sing
le
Aval
an
che
Current
-
A
0.1
1
10
100
0.01
0.1
1
10
VDD = 150 V
VGS = 20
→ 0 V
RG = 25
Ω
Starting Tch = 25
°C
IAS = 10 A
EAS = 10.7 mJ
L - Inductive Load - H
Ene
rgy
Derating
F
a
ctor
-
%
0
20
40
60
80
100
120
25
50
75
100
125
150
VDD = 150 V
RG = 25
Ω
VGS = 20
→ 0 V
IAS
≤ 10 A
Starting Tch - Starting Channel Temperature -
°C
PACKAGE DRAWING (Unit: mm)
EQUIVALENT CIRCUIT
Isolated TO-220 (MP-45F)
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
2.54±0.2
0.8±0.2
2.54 TYP.
1.47 MAX
12 3
3.0
TYP.
13.5
MAX.
15.87±0.3
3.30±0.20
4.7±0.2
2.76±0.2
0.50±0.1
Body
Diode
Source (S)
Drain (D)
Gate (G)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
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