參數(shù)資料
型號: 2SK3326B-S17-AY
元件分類: JFETs
英文描述: 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, MP-45F, ISOLATED TO-220, 3 PIN
文件頁數(shù): 4/9頁
文件大小: 257K
代理商: 2SK3326B-S17-AY
Data Sheet D18430EJ2V0DS
2
2SK3326B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Gate Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 5.0 A
2.0
3.9
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 5.0 A
0.76
0.85
Ω
Input Capacitance
Ciss
VDS = 10 V
1270
pF
Output Capacitance
Coss
VGS = 0 V
210
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
6
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 5.0 A
19
ns
Rise Time
tr
VGS = 10 V
6.5
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
31
ns
Fall Time
tf
RL = 60
Ω
5
ns
Total Gate Charge
QG
VDD = 400 V
20
nC
Gate to Source Charge
QGS
VGS = 10 V
9.5
nC
Gate to Drain Charge
QGD
ID = 10 A
5.5
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 10 A, VGS = 0 V
0.98
1.5
V
Reverse Recovery Time
trr
IF = 10 A, VGS = 0 V
440
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
μs
2000
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 μs
Duty Cycle
1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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