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| 型號(hào)： | 2SK3325B-ZK-E2-AY |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | LEAD FREE, MP-25ZK, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 237K |
| 代理商： | 2SK3325B-ZK-E2-AY |
Data Sheet D18429EJ2V0DS
3
2SK3325B
TYPICAL CHARACTERISTICS (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
d
T
-
P
er
cent
age
of
Ra
ted
P
o
wer
-
%
0
20
40
60
80
100
120
0
25
50
75
100
125 150
175
Tch - Channel Temperature -
°C
P
T-
T
otal
Powe
r
Di
ssipation
-
W
0
10
20
30
40
50
60
70
80
90
0
25
50
75
100
125
150
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
I
D
-
Dr
ain
Cur
rent
-
A
0.01
0.1
1
10
100
1
10
100
1000
ID(DC)
RDS(on) Limited
(VGS = 10 V)
TC = 25
°C
Single Pulse
ID(pulse)
1
m
s
10
m
s
PW
= 1
00
μs
Po
we
r D
iss
ipa
tion
Lim
ited
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth
(c
h-
A
)-
Transient
Therma
lResista
nc
e-
°C/
W
0.01
0.1
1
10
100
1000
Rth(ch-A) = 83.3
°C/W
Rth(ch-C) = 1.47
°C/W
Single pulse
PW - Pulse Width – s
100
μ
1 m
10 m
100 m
1
10
100
1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3325B-ZK-E1-AY | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3326 | 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3353-Z-AZ | 82 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3353-AZ | 82 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3355-Z | 83 A, 60 V, 0.0088 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3325-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3325-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3325-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) TO-263 Cut Tape |
| 2SK3325-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3326 | 制造商:JVC Worldwide 功能描述:500V 10A 40W Nec Fet TO-220Ab N-Channel |
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