參數(shù)資料
型號: 2SK3326
元件分類: JFETs
英文描述: 10 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-45F, ISOLATED TO-220, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 70K
代理商: 2SK3326
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2000
MOS FIELD EFFECT TRANSISTOR
2SK3326
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D14204EJ1V0DS00 (1st edition)
Date Published
March 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features
a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge :
QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
Gate voltage rating : ±30 V
Low on-state resistance :
RDS(on) = 0.85
MAX. (VGS = 10 V, ID = 5.0 A)
Avalanche capability ratings
Isolated TO-220(MP-45F) package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
500
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±30
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse)
Note1
ID(pulse)
±40
A
Total Power Dissipation (TC = 25°C)
PT
40
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
10
A
Single Avalanche Energy
Note2
EAS
10.7
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25
, VGS = 20 V → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3326
Isolated TO-220
(Isolated TO-220)
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