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MOS FIELD EFFECT TRANSISTOR
2SK3322
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14114EJ2V0DS00 (2nd edition)
Date Published August 2003 NS CP(K)
Printed in Japan
1999, 2000
The mark
★
shows major revised points.
DESCRIPTION
The 2SK3322 is N-Channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, and designed for high voltage
applications such as switching power supply, AC
adapter.
FEATURES
Low gate charge :
Q
G
= 15 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 5.5 A)
Gate voltage rating :
±
30 V
Low on-state resistance :
R
DS(on)
= 2.2
MAX. (V
GS
= 10 V, I
D
= 2.8 A)
Avalanche capability ratings
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
, V
GS
= 20
→
0 V
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
600
±30
±5.5
±20
1.5
65
150
V
V
A
A
W
W
°C
°C
A
mJ
55 to +150
4.0
10.7
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3322
TO-220AB (MP-25)
2SK3322-S
TO-262
2SK3322-ZJ
TO-263(MP-25ZJ)
2SK3322-ZK
TO-263(MP-25ZK)
★
★