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參數(shù)資料
| 型號： | 2SK3316 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 425K |
| 代理商： | 2SK3316 |
2SK3316
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±100 A, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
1.6
1.8
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.5
3.8
—
S
Input capacitance
Ciss
—
780
—
Reverse transfer capacitance
Crss
—
60
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
200
—
pF
Rise time
tr
—
12
—
Turnon time
ton
—
25
—
Fall time
tf
—
15
—
Switching time
Turnoff time
toff
—
60
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
17
—
Gatesource charge
Qgs
—
11
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 5 A
—
6
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
60
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR / dt = 100 A / s
—
0.1
—
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3316
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3316(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220NIS |
| 2SK3316_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3316QT | 制造商:Toshiba America Electronic Components 功能描述:SILICON N CHANNEL MOSFET |
| 2SK3318 | 功能描述:MOSFET N-CH 600V 15A TOP-3F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK331A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 300UA I(DSS) | SO |
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