參數(shù)資料
型號(hào): 2SK3324-A
元件分類: JFETs
英文描述: 6 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-88, TO-3P, 3 PIN
文件頁數(shù): 1/8頁
文件大?。?/td> 69K
代理商: 2SK3324-A
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1999
MOS FIELD EFFECT TRANSISTOR
2SK3324
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D14203EJ2V0DS00 (2nd edition)
Date Published
January 2000 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK3324 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
Designed for high voltage applications such as switching
power supply, AC adapter.
FEATURES
Low gate charge :
QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
Gate voltage rating : ±30 V
Low on-state resistance :
RDS(on) = 2.8
MAX. (VGS = 10 V, ID = 3.0 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS(AC)
±30
V
Drain Current (DC)
ID(DC)
±6
A
Drain Current (Pulse)
Note1
ID(pulse)
±18
A
Total Power Dissipation (TC = 25°C)
PT
120
W
Total Power Dissipation (TA = 25°C)
PT
3.0
W
Storage Temperature
Tstg
–55 to + 150
°C
Single Avalanche Current
Note2
IAS
6.0
A
Single Avalanche Energy
Note2
EAS
21.6
mJ
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25
, VGS = 20 V
→ 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3324
TO-3P
(TO-3P)
The mark
shows major revised points.
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PDF描述
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