參數(shù)資料
型號： 2SK3313
元件分類： JFETs
英文描述： 12 A, 500 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： 2-10R1B, SC-67, 3 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 416K
代理商： 2SK3313
2SK3313
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3313
Chopper Regulatorand DCDC Converter Applications
Motor Drive Applications
Fast reverse recovery time
: trr = 90 ns (typ.)
Builtin highspeed freewheeling diode
Low drainsource ON resistance
: RDS (ON) = 0.5 (typ.)
High forward transfer admittance
: |Yfs| = 8.5 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
12
A
Drain current
Pulse (Note 1)
IDP
48
A
Drain power dissipation (Tc = 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
324
mJ
Avalanche current
IAR
12
A
Repetitive avalanche energy (Note 3)
EAR
4.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
3.125
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.83 mH, RG = 25 , IAR = 12 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
相關(guān)PDF資料
PDF描述
2SK3320 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET
2SK3320Y SMALL SIGNAL, FET
2SK3320BL SMALL SIGNAL, FET
2SK3322 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3322-S 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3313(Q) 功能描述:MOSFET N-ch 500V 12A 0.62 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3313_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulatorand DC−DC Converter Applications Motor Drive Applications
2SK3313_10 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator and DC−DC Converter Applications Motor Drive Applications
2SK3314 功能描述:MOSFET N-CH 500V 15A TO-3PN RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件
2SK3314(Q) 功能描述:MOSFET N-ch 500V 20A 0.480 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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