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參數(shù)資料
| 型號(hào)： | 2SK3320BL |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 169K |
| 代理商： | 2SK3320BL |
2SK3320
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3320
For Low Noise Audio Amplifier Applications
Two devices in a ultra super mini (five pins) package
High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
High breakdown voltage: VGDS = 50 V
Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Maximum Ratings (Ta
==== 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-50
V
Gate current
IG
10
mA
Drain power dissipation
PD
(Note 1)
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Note 1: Total rating
Marking
Pin Assignment (top view)
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.)
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PDF描述 |
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| 2SK3322 | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3322-S | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3322-AZ | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3322-ZK-AZ | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3322-ZK | 5.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3320-BL(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:JFET DUAL N-CH USV |
| 2SK3320-GR | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel Junction Type |
| 2SK3320-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:JFET DUAL N-CH USV |
| 2SK3320Y | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:For Low Noise Audio Amplifier Applications |
| 2SK3320-Y(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:JFET DUAL N-CH USV |
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