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參數(shù)資料
| 型號(hào)： | 2SK3309(2-10S1B) |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10S1B, 3 PIN |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | 2SK3309(2-10S1B) |
2SK3309
2002-09-04
5
D
rai
n
cu
rre
nt
I D
(A
)
Channel temperature (initial) Tch (°C)
A
val
anc
he
en
er
gy
E
AS
(mJ
)
rth – tw
Pulse width tw (S)
N
or
m
al
iz
ed
t
ra
nsi
e
nt
t
he
rm
al
im
pe
da
nc
e
r th
(t)
/R
th
(c
h-a)
-15 V
15 V
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25 W
VDD = 90 V, L = 3.7 mH
÷
è
-
×
=
VDD
BVDSS
2
I
L
2
1
ΕAS
Drain-source voltage VDS (V)
EAS – Tch
Safe operating area
100
200
300
50
100
0
400
25
75
150
125
0.01
0.1
1
10
100
1
10
100
1000
* Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pulse) *
ID max
(continuous)
DC operation
Tc
= 25°C
100
ms *
1 ms *
VDSS max
0.01
10
m
0.1
1
10
100
m
1 m
10 m
100 m
1
10
T
PDM
t
Duty
= t/T
Rth (ch-c) = 1.92°C/W
Duty
= 0.5
0.2
0.1
Single pulse
0.05
0.01
0.001
0.02
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