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參數(shù)資料
| 型號： | 2SK3306B-S17-AY |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, ISOLATED TO-220, MP-45F, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 181K |
| 代理商： | 2SK3306B-S17-AY |
Data Sheet D18462EJ1V0DS
2
2SK3306B
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 2.5 A
1.0
2.2
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 2.5 A
1.2
1.5
Ω
Input Capacitance
Ciss
VDS = 10 V
730
pF
Output Capacitance
Coss
VGS = 0 V
120
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
6
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 2.5 A
13
ns
Rise Time
tr
VGS = 10 V
7.5
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
25
ns
Fall Time
tf
RL = 60
Ω
6.5
ns
Total Gate Charge
QG
VDD = 400 V
13
nC
Gate to Source Charge
QGS
VGS = 10 V
6
nC
Gate to Drain Charge
QGD
ID = 5.0 A
4
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 5.0 A, VGS = 0 V
0.9
V
Reverse Recovery Time
trr
IF = 5.0 A, VGS = 0 V
240
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
1200
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 μs
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3307 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3307-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,70A,7,5m ohm,TO-3P 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-3P |
| 2SK3309 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3309(Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3309(TE24L,Q) | 功能描述:MOSFET MOSFET N-Ch 450V 10A Rdson=0.48Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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