參數(shù)資料
型號: 2SK3306B-S17-AY
元件分類: JFETs
英文描述: 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, ISOLATED TO-220, MP-45F, 3 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 181K
代理商: 2SK3306B-S17-AY
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Document No. D18462EJ1V0DS00 (1st edition)
Date Published November 2006 NS CP (K)
Printed in Japan
SWITCHING
N-CHANNEL POWER MOSFET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3306B
2006
DESCRIPTION
The 2SK3306B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low gate charge
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
Gate voltage rating : ±30 V
Low on-state resistance
RDS(on) = 1.5
Ω MAX. (VGS = 10 V, ID = 2.5 A)
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK3306B-S17-AY
Note
Pure Sn (Tin)
Tube 50 p/tube
Isolated TO-220 (MP-45F) typ. 2.2 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
500
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25
°C)
ID(DC)
±5
A
Drain Current (pulse)
Note1
ID(pulse)
±20
A
Total Power Dissipation (TC = 25
°C)
PT1
35
W
Total Power Dissipation
PT2
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
5.0
A
Single Avalanche Energy
Note2
EAS
125
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25
°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
(Isolated TO-220)
相關(guān)PDF資料
PDF描述
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