參數(shù)資料
型號(hào): 2SK3301(2-7J1B)
元件分類: JFETs
英文描述: 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-7J1B, SC-64, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 144K
代理商: 2SK3301(2-7J1B)
2SK3301
2010-02-05
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 720 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.4
3.4
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
15
20
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 0.5 A
0.3
0.65
S
Input capacitance
Ciss
165
pF
Reverse transfer capacitance
Crss
6
pF
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
21
pF
Rise time
tr
15
Turn-on time
ton
60
Fall time
tf
40
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 μs
110
ns
Total gate charge
(gate-source plus gate-drain)
Qg
6
nC
Gate-source charge
Qgs
3
nC
Gate-drain (“miller”) charge
Qgd
VDD 400 V, VGS = 10 V, ID = 1 A
3
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
1
A
Pulse drain reverse current
(Note 1)
IDRP
2
A
Forward voltage (diode)
VDSF
IDR = 1 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1300
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V
dIDR/dt = 100 A/μs
1.95
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K3301
Lot No.
Note 4
Part No. (or abbreviation code)
0 V
10 V
VGS
R
L
=800
Ω
VDD 400 V
ID = 0.5 A
VOUT
50
Ω
相關(guān)PDF資料
PDF描述
2SK3301 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3304 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3305-ZJ 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3305-ZJ 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3305-AZ 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3301Q 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulatorand DC-DC Converter Applications
2SK3302 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK3302_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications
2SK3304 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3304-A 制造商:Renesas Electronics 功能描述:Nch 900V 7A 2000m@10V TO3P Bulk