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參數(shù)資料
| 型號(hào)： | 2SK3301 |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-7J1B, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 144K |
| 代理商： | 2SK3301 |
2SK3301
2011-04-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK3301
Switching Regulatorand DC-DC Converter Applications
Low drain-source ON-resistance: RDS (ON) = 15 (typ.)
High forward transfer admittance: |Yfs| = 0.65 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
Enhancement mode: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
1
Drain current
Pulse (Note 1)
IDP
2
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
140
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 257 mH, RG = 25 Ω,
IAR = 1 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3301(Q) | 功能描述:MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3301(SM) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1A I(D) | TO-252 |
| 2SK3301(TE16L1,NQ) | 功能描述:MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3301_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulatorand DC-DC Converter Applications |
| 2SK3301_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulatorand DC-DC Converter Applications |
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