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參數資料
| 型號： | 2SK330-BL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1B, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 180K |
| 代理商： | 2SK330-BL |
2SK330
2003-03-25
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK330
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 320 (typ.) (IDSS = 5 mA)
Complementary to 2SJ105
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.7
-6.0
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.5
4
mS
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0, IDSS = 5 mA
320
W
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
9.0
pF
Reverse transfer capacitance
Crss
VGD = -10 V, ID = 0, f = 1 MHz
2.5
pF
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK330GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.6MA I(DSS) | SPAK |
| 2SK330-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK330Y | 制造商:Toshiba 功能描述:Trans JFET N-CH 3mA 3-Pin 2-4E1B 制造商:Toshiba 功能描述:Trans JFET N-CH 3mA 3-Pin 2-4E1B Bulk |
| 2SK3310 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3310(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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