- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33497 > 2SK3299-ZJ 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF資料下載
參數(shù)資料
| 型號： | 2SK3299-ZJ |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, TO-263, 3 PIN |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 206K |
| 代理商： | 2SK3299-ZJ |
Data Sheet D14060EJ1V0DS00
2
2SK3299
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS = 600 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 5.0 A
3.2
S
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 5.0 A
0.68
0.75
Input Capacitance
Ciss
VDS = 10 V
1580
pF
Output Capacitance
Coss
VGS = 0 V
280
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
25
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 5.0 A
27
ns
Rise Time
tr
VGS(on) = 10 V
17
ns
Turn-off Delay Time
td(off)
RG = 10
66
ns
Fall Time
tf
24
ns
Total Gate Charge
QG
VDD = 450 V
34
nC
Gate to Source Charge
QGS
VGS = 10 V
8.2
nC
Gate to Drain Charge
QGD
ID = 10 A
12.3
nC
Diode Forward Voltage
VF(S-D)
IF = 10 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 10 A, VGS = 0 V
1.9
s
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
12
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr td(off)
tf
10 %
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3299-AZ | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3301(2-7J1B) | 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3301 | 1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3304 | 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3305-ZJ | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK33 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK330 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
| 2SK330_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications |
| 2SK3301 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulatorand DC-DC Converter Applications |
| 2SK3301(Q) | 功能描述:MOSFET MOSFET N-Ch 900V 1A Rdson=20Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。