參數(shù)資料
型號: 2SK3297
廠商: NEC Corp.
英文描述: MOS FIELD EFFECT TRANSISTOR
中文描述: MOS場效應(yīng)管
文件頁數(shù): 7/8頁
文件大?。?/td> 66K
代理商: 2SK3297
Data Sheet D14058EJ1V0DS
7
2SK3297
PACKAGE DRAWING(Unit: mm)
Isolated TO-220 (MP-45F)
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
1.Gate
2.Drain
3.Source
10.0±0.3
3.2±0.2
φ
1
3
1
1
4
0.7±0.1
1.3±0.2
1.5±0.2
2.54 TYP.
2.54 TYP.
1 2 3
2.5±0.1
0.65±0.1
4.5±0.2
2.7±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3297(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SK3298 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3298-AZ 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 Bulk
2SK3299 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
2SK3299-S 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE