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參數(shù)資料
| 型號： | 2SK3296-ZJ |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 20 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, TO-263, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 422K |
| 代理商： | 2SK3296-ZJ |
Data Sheet D14063EJ2V0DS
2
2SK3296
ELECTRICAL CHARACTERISTICS(TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
IDSS
VDS = 20 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
2.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 18 A
9.0
S
Drain to Source On-state Resistance
RDS(on)1
VGS = 10 V, ID = 18 A
8.5
12
m
RDS(on)2
VGS = 4.5 V, ID = 18 A
12
19
m
Input Capacitance
Ciss
VDS = 10 V
1300
pF
Output Capacitance
Coss
VGS = 0 V
570
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
300
pF
Turn-on Delay Time
td(on)
VDD = 10 V , ID = 18 A
70
ns
Rise Time
tr
VGS(on) = 10 V
1220
ns
Turn-off Delay Time
td(off)
RG = 10
100
ns
Fall Time
tf
180
ns
Total Gate Charge
QG
VDD = 16 V
30
nC
Gate to Source Charge
QGS
VGS = 10 V
4.5
nC
Gate to Drain Charge
QGD
ID = 35 A
8.0
nC
Diode Forward Voltage
VF(S-D)
IF = 35 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 35 A, VGS = 0 V
35
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
s
23
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
VGS(on)
10%
0
ID
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3296-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3297 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3297(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3298 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3298-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 Bulk |
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