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參數(shù)資料
| 型號： | 2SK3288 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK3288 |
2SK3288
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
100
mA
Drain peak current
I
D(pulse)
Note1
400
mA
Body-drain diode reverse drain current
I
DR
100
mA
Channel dissipation
Pch
Note 2
400
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
V
I
D = 100 A, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±5
AV
GS = ±16 V, VDS = 0
Zero gate voltege drain
current
I
DSS
——1
AV
DS = 30 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.3
—
2.3
V
I
D = 10A, VDS = 5 V
Static drain to source on state R
DS(on)
—
2.7
3.5
I
D = 50 mA,VGS = 10 V
Note 3
resistance
R
DS(on)
—
4.7
7.0
I
D = 20 mA,VGS = 4 V
Note 3
Forward transfer admittance
|y
fs|
5585—mS
I
D = 50 mA, VDS = 10 V
Note 3
Input capacitance
Ciss
—
3
—
pF
V
DS = 10 V
Output capacitance
Coss
—
8
—
pF
V
GS = 0
Reverse transfer capacitance Crss
—
1
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
100
—
ns
I
D = 50 mA, VGS = 10 V
Rise time
t
r
—
300
—
ns
R
L = 200
Turn-off delay time
t
d(off)
—
1100
—
ns
Fall time
t
f
—
900
—
ns
Note:
3. Pulse test
4. Marking is EN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3288ENTL | 功能描述:MOSFET N-CH 30V .1A MPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3289 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching |
| 2SK3289AN(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3290 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Switching |
| 2SK3290BNTL | 制造商:Renesas Electronics 功能描述:Cut Tape |
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