參數(shù)資料
型號(hào)： 2SK3218-01
廠商： FUJI ELECTRIC CO LTD
元件分類(lèi)： JFETs
英文描述： CABLE ASSEMBLY; LEAD-FREE SOLDER; BNC MALE TO SMA MALE; 50 OHM, RG196A/U COAX; *USES STANDARD 50 OHM INTERFACE CONNECTORS*
中文描述： 40 A, 150 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 146K
代理商： 2SK3218-01
1
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation Ta=25°C
Tc=25°C
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
E
AV *1
P
D
P
D
T
ch
T
stg
Rating
150
±40
±160
±30
387
Unit
V
A
A
V
mJ
W
W
°C
°C
1.67
135
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3218-01
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=150V
V
V
GS
=0V Tch=125°C
=±30V
DS
=0V
V
I
D
=20A V
GS
=10V
I
D
=20A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=48V I
D
=40A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
150
2.5
3.0
1
0.1
10
37
12.5
25.0
2650
550
240
21
95
115
60
40
0.97
180
1.30
V
V
μA
mA
nA
m
S
pF
A
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.93
75.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=1mA V
DS
=V
GS
L=100μH T
ch
=25°C
I
F
=40A V
GS
=0V T
ch
=25°C
I
F
=40A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
*1 L=420μH, Vcc=24V
3.5
100
0.5
100
43
3980
830
360
32
142
173
90
1.46
TO-220AB
3.
Source
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3218-01SC 制造商:Fuji Electric 功能描述:
2SK3219-01MR 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET
2SK3219-01MRSC 制造商:Fuji Electric 功能描述:
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2SK3221 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET
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