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參數(shù)資料
| 型號(hào)： | 2SK3236 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（U型馬鞍山） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 228K |
| 代理商： | 2SK3236 |
2SK3236
2002-08-12
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS
II
)
2SK3236
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
4 V gate drive
Low drain-source ON resistance: R
DS (ON)
= 13.5 m
(typ.)
High forward transfer admittance: |Y
fs
| = 42 S (typ.)
Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 60 V)
Enhancement-model: V
th
= 1.3~2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
60
V
Drain-gate voltage (R
GS
20 k )
V
DGR
60
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
35
Drain current
Pulse
(Note 1)
I
DP
105
A
Drain power dissipation (Tc 25°C)
P
D
30
W
Single pulse avalanche energy
(Note 2)
E
AS
68
mJ
Avalanche current
I
AR
35
A
Repetitive avalanche energy (Note 3)
E
AR
3.0
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
4.16
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
62.5
°C/W
Note 1: Please use devises on condition that the channel temperature is below 150°C.
Note 2: V
DD
50 V, T
ch
25°C, L 40 H, R
G
25 , I
AR
35 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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