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參數(shù)資料
| 型號(hào)： | 2SK3116B-S19-AY |
| 元件分類： | JFETs |
| 英文描述： | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, MP-25, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | 2SK3116B-S19-AY |
Data Sheet D18068EJ2V0DS
5
2SK3116B
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-
Ω
0
0.5
1
1.5
2
2.5
3
-50 -25
0
25
50
75 100 125 150
ID = 7.5 A
4.0 A
VGS = 10 V
Pulsed
Tch - Channel Temperature - °C
IF
–
Diode
Fo
rwa
rd
Cur
rent
-A
0.01
0.1
1
10
100
00.5
11.5
Pulsed
VGS = 10 V
0 V
VF(S-D) – Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
C
is
s,
C
os
s,
C
rss
-
Capacitance
-
pF
1
10
100
1000
10000
0.01
0.1
1
10
100
VGS = 0 V
f = 1 MHz
C iss
C oss
C rss
VDS - Drain to Source Voltage – V
t
d(
o
n)
,t
r,
t
d(
off)
,t
f-
Switching
Time
-
ns
1
10
100
1000
0.1
1
10
tr
td(off)
td(on)
tf
VDD = 150 V
VGS = 10 V
RG = 10
Ω
ID - Drain Current - A
REVWESE RECOVERY TIME vs.
DRAIN CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
trr
–
Rev
ers
eRec
ov
ery
Ti
me
-ns
10
100
1000
0.1
1
10
di/dt = 50 A/μs
VGS = 0 V
ID - Drain Current - A
V
DS
–
D
rain
to
So
urce
Voltage
-
V
0
100
200
300
400
500
600
700
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
9
10
VDS
VGS
ID = 7.5 A
VDD = 450 V
300 V
150 V
QG – Gate Chage - nC
V
GS
–
Ga
te
to
So
urce
Voltage
-
V
<R>
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3116-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) TO-263 |
| 2SK3116-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3117 | 功能描述:MOSFET N-CH 500V 20A TO-3PSM RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3117_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
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