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參數(shù)資料
| 型號： | 2SK3116B-S19-AY |
| 元件分類： | JFETs |
| 英文描述： | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, MP-25, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | 2SK3116B-S19-AY |
Data Sheet D18068EJ2V0DS
2
2SK3116B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHRACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 600 V, VGS = 0 V
100
μA
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
3.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 3.75 A
2.0
2.7
S
Drain to Source On-state Resistance
Note
RDS(on)
VGS = 10 V, ID = 3.75 A
0.9
1.2
Ω
Input Capacitance
Ciss
VDS = 10 V
1090
pF
Output Capacitance
Coss
VGS = 0 V
380
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
53
pF
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 3.75 A
16
ns
Rise Time
tr
VGS = 10 V
11
ns
Turn-off Delay Time
td(off)
RG = 10
Ω
29
ns
Fall Time
tf
RL = 50
Ω
8
ns
Total Gate Charge
QG
VDD = 450 V
22
nC
Gate to Source Charge
QGS
VGS = 10 V
8.8
nC
Gate to Drain Charge
QGD
ID = 7.5 A
8.6
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 7.5 A, VGS = 0 V
0.93
V
Reverse Recovery Time
trr
IF = 7.5 A, VGS = 0 V
390
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
μs
2000
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
RG = 10
Ω
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 μs
Duty Cycle
≤ 1%
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10%
0
90%
VGS
ID
ton
toff
td(on)
tr
td(off)
tf
10%
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| 2SK3116-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) TO-263 |
| 2SK3116-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3117 | 功能描述:MOSFET N-CH 500V 20A TO-3PSM RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3117_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
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