參數(shù)資料
型號: 2SK3116
元件分類: JFETs
英文描述: 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-25, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 70K
代理商: 2SK3116
Data Sheet D13339EJ2V0DS
4
2SK3116
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
150
R
DS
(on)
-Drain
to
Source
On-State
Resistance
-
2.0
0
100
50
Tch - Channel Temperature - C
3.0
1.0
VGS = 10 V
4.0
4.0 A
Pulsed
ID = 7.5 A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
1.5
1.0
0.5
0
100
10
1.0
0.1
Pulsed
0 V
VGS = 10 V
1000
100
10
1.0
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
Ciss
Coss
Crss
VGS = 0 V
f = 1 MHz
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
0.1
1
10
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
100
10
1
0.1
VDD = 150 V
VGS = 10 V
RG = 10
td(off)
td(on)
tf
tr
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0
10
100
trr
-
Reverse
Recovery
Time
-
ns
0.1
ID - Drain Current - A
10000
1000
100
10
di/dt = 50 A/
s
VGS = 0 V
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
012
820
32
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
V
16
14
12
10
8
6
4
2
0
ID = 7.5 A
VGS
VDD = 450 V
300 V
150 V
VDS
相關(guān)PDF資料
PDF描述
2SK3116-ZJ 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3120 2 A, 30 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3127(2-10S2B) 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3127(2-10S1B) 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3134(S) 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3116-AZ 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk
2SK3116B 制造商:NEC 制造商全稱:NEC 功能描述:7.5A600V
2SK3116-S 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
2SK3116-Z-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) TO-263
2SK3116-ZJ 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET