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參數(shù)資料
| 型號： | 2SK3113B-ZK-E1-AY |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 196K |
| 代理商： | 2SK3113B-ZK-E1-AY |
Data Sheet D18061EJ3V0DS
7
2SK3113B
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3-a)
2) TO-251 (MP-3-b)
6.6
±0.2
Mold Area
2.3
±0.1
0.5
±0.1
0.76
±0.1
0.5
±0.1
No Plating
5.3 TYP.
0.7
TYP.
6.1
±
0.2
1.8
±
0.2
9.3
TYP.
4.0
MIN
.
1.02
TYP.
16.1
TYP.
4.3 MIN.
1
4
23
1.14 MAX.
2.3 TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.6±0.2
2.3±0.1
0.5±0.1
0.76±0.12
0.5±0.1
5.3 TYP.
2.3 TYP.
1.14 MAX.
1.06
TYP.
11.25
TYP.
4.13
TYP.
1.04
TYP.
6.1±0.2
1.1±0.13
2
13
4
3) TO-252 (MP-3ZK)
EQUIVALENT CIRCUIT
6.5
±0.2
2.3
±0.1
0.5
±0.1
0.76
±0.12
0 to 0.25
0.5
±0.1
1.0
No Plating
5.1 TYP.
1.0
TYP.
6.1
±
0.2
0.51
MIN.
4.0
MIN
.
0.8
10.4
MAX.
(9.8
TYP.)
4.3 MIN.
1
4
23
1.14 MAX.
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3113B-ZK-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3113-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO252 Bulk |
| 2SK3114 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3114-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 4A 2200m@10V IsolatedTO220 Bulk |
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