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參數(shù)資料
| 型號： | 2SK3113B-ZK-E1-AY |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 196K |
| 代理商： | 2SK3113B-ZK-E1-AY |
Data Sheet D18061EJ3V0DS
3
2SK3113B
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT
-
P
ercentage
of
Rated
Po
wer
-
%
040
20
60
100
140
80
120
160
100
80
60
40
20
0
Tch - Channel Temperature -
°C
P
T-
T
otal
Power
Di
ssipation
-
W
0
80
20
40
60
100
140
120
160
40
30
20
10
5
15
25
35
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
I
D
-
Drain
Current
-
A
0.01
0.1
1
10
100
1
10
100
1000
100
μs
1 ms
10 ms
ID(pulse)
ID(DC)
RDS(on) Limited
(at VGS = 10 V)
PW = 10 μs
Power Dissipation Limited
Tc = 25°C, Single pulse
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth
(c
h-
A
)-
Transient
Ther
mal
Resistance
-
°C/W
0.01
0.1
1
10
100
1000
Rth(ch-A) = 125°C/W
Rth(ch-C) = 6.25°C/W
Single pulse
PW - Pulse Width – s
100
μ
1 m
10 m
100 m
1
10
100
1000
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| 2SK3113B-ZK-E2-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
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| 2SK3113B-S15-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
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| 2SK3114B-S17-AY | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3113B-ZK-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3113-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO252 Bulk |
| 2SK3114 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3114-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 4A 2200m@10V IsolatedTO220 Bulk |
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