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參數(shù)資料
| 型號： | 2SK3113 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 231K |
| 代理商： | 2SK3113 |
2SD1606
3
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
60
40
20
0.03
0.1
0.3
1.0
3
10
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
3
10
30
100
300
Area of Safe Operation
iC (peak)
IC (max)
1
s
100
s
1
ms
PW
=
10
ms
DC
Operation
(T
C =
25
°C)
Ta = 25
°C
1 shot pulse
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
0
Typical Output Characteristics
12345
2
4
6
8
10
Ta = 25
°C
IB = 0
0.5 mA
1.0
1.5
2.0
3.0
2.5
30
100
300
1,000
3,000
10,000
30,000
Collector current IC (A)
DC
current
transfer
ratio
h
FE
0.1
0.3
1.0
3
10
DC Current Transfer Ratio
vs. Collector Current
VCE = 3 V
Pulse
Ta
= 75
°C
–25
25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3114B-S17-AY | 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3116B-S19-AY | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3116B-S19-AY | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3116 | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3116-ZJ | 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3113-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO251 Bulk |
| 2SK3113B | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B(1)-S27-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-S15 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3113B-S15-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
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