參數(shù)資料
型號: 2SK3113
元件分類: 小信號晶體管
英文描述: 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA
封裝: TO-251, MP-3, 3 PIN
文件頁數(shù): 10/10頁
文件大?。?/td> 231K
代理商: 2SK3113
Data Sheet D13336EJ4V0DS
7
2SK3113
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
<R> 2) TO-252 (MP-3Z)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Note The depth of notch at the top of the fin is from 0
to 0.2 mm.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
相關PDF資料
PDF描述
2SK3114B-S17-AY 4 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3116B-S19-AY 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3116B-S19-AY 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3116 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK3116-ZJ 7.5 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關代理商/技術參數(shù)
參數(shù)描述
2SK3113-AZ 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO251 Bulk
2SK3113B 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SK3113B(1)-S27-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR
2SK3113B-S15 制造商:Renesas Electronics Corporation 功能描述:
2SK3113B-S15-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR