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參數(shù)資料
| 型號： | 2SK3109-S |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封裝： | TO-262, MP-25 FIN CUT, 3 PIN |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 141K |
| 代理商： | 2SK3109-S |
Data Sheet D13332EJ3V0DS
3
2SK3109
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
20
30
25
5
0
Pulsed
10
15
20
30
35
0
VGS = 10 V
VGS = 30 V
40
50
0.01
0
0.1
1
10
412
0.001
100
VDS = 10 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
816
Tch = 125C
75C
25C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
50
0
150
50
2.0
2.5
100
3.0
3.5
4.0
4.5
5.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Transfer
Admittance
-
S
ID- Drain Current - A
1
10
100
VDS = 10 V
Pulsed
Tch =
25C
25C
75C
125C
0.01
0.1
0.01
0.1
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
08
0.1
10
16
0.3
0.2
0.4
0.5
0
20
24
6
12
14
18
0.6
0.7
0.8
0.9
1.0
ID = 10 A
5 A
2 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
1.2
0.8
0.6
0.2
10
100
0.1
0
1
Pulsed
VGS = 10 V
0.4
1.0
1.4
VGS = 30 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3109-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK311 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK3110 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3110-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 14A 180m@10V IsolatedTO220 Bulk |
| 2SK3111 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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