參數(shù)資料
型號(hào): 2SK3109-S
元件分類(lèi): JFETs
英文描述: 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: TO-262, MP-25 FIN CUT, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 141K
代理商: 2SK3109-S
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MOS FIELD EFFECT TRANSISTOR
2SK3109
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D13332EJ3V0DS00 (3rd edition)
Date Published March 2004 NS CP(K)
Printed in Japan
1998, 2000
The mark
shows major revised points.
DESCRIPTION
The 2SK3109 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.4
MAX. (VGS = 10 V, ID = 5.0 A)
Low input capacitance
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±10
A
Drain Current (pulse)
Note1
ID(pulse)
±30
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
10
A
Single Avalanche Energy
Note2
EAS
35
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25
, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3109
TO-220AB (MP-25)
2SK3109-S
TO-262 (MP-25 Fin Cut)
2SK3109-ZJ
TO-263 (MP-25ZJ)
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