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參數(shù)資料
| 型號： | 2SK3108-AZ |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 2SK3108-AZ |
1998,2000
MOS FIELD EFFECT TRANSISTOR
2SK3108
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D13331EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP (K)
Printed in Japan
DATA SHEET
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3108 is N channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 0.4
MAX. (VGS = 10 V, ID = 4.0 A)
Low input capacitance
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current(DC) (TC = 25°C)
ID(DC)
±8.0
A
Drain Current(pulse)
Note1
ID(pulse)
±24
A
Total Power Dissipation (TA = 25°C)
PT1
2.0
W
Total Power Dissipation (TC = 25°C)
PT2
25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
8.0
A
Single Avalanche Energy
Note2
EAS
51
mJ
Note1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25
, VGS = 20 V→0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3108
Isolated TO-220
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3108 | 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3110 | 14 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3132 | 50 A, 500 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3142-E | 60 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3147S | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3109 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3109-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3109-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK311 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK3110 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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