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參數(shù)資料
| 型號： | 2SK3132 |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 500 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-21F1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 418K |
| 代理商： | 2SK3132 |
2SK3132
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3132
Chopper Regulator DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.07 (typ.)
High forward transfer admittance
: |Yfs| = 33 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
: Vth = 2.4 to 3.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
500
V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
50
A
DCDrain current
Pulse (Note 1)
IDP
200
A
Drain power dissipation (Tc
= 25°C)
PD
250
W
Single pulse avalanche energy
(Note 2)
EAS
525
mJ
Avalanche current
IAR
50
A
Repetitive avalanche energy (Note 3)
EAR
25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.5
°C / W
Thermal resistance, channel to ambient
Rth (cha)
35.7
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 μH, RG = 25 , IAR = 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
—
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3132(Q) | 功能描述:MOSFET N-ch 500V 50A 0.110 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3132_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3132_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator DC−DC Converter and Motor Drive Applications |
| 2SK3133 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3133L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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