參數(shù)資料
型號(hào): 2SK3107
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: USM, SC-75, 3 PIN
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 131K
代理商: 2SK3107
Data Sheet D13802EJ4V0DS
3
2SK3107
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-
Total
Power
Dissipation
-
mW
TA - Ambient Temperature - C
30
240
0
60
90
120
150
200
160
120
80
40
180
210
Mounted on ceramic substrate
of 3.0 cm
2 x 0.64 mm
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
mA
2
810
4
6
200
100
0
400
300
2.5 V
3 V
3.5 V
VGS = 4 V
Pulsed
1.0
2.0
3.0
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
4.0
5.0
VGS - Gate to Sorce Voltage - V
TA = 125C
75C
25C
VDS = 3.0 V
Pulsed
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
1
10
100
1000
0.01
0.1
0.001
0.0001
ID - Drain Current - A
|y
fs
|-
Forward
Transfer
Admittance
-
mS
TA =
25C
75C
125C
VDS = 3.0 V
Pulsed
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.0001
0.001
0.1
0.01
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
Ω
10
15
10
20
5
TA = 125C
25C
75C
25C
VGS = 2.5 V
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.01
0.001
0.0001
0.1
1
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
Ω
0
5
10
15
TA = 125C
75C
25C
VGS = 4.0 V
Pulsed
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