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參數(shù)資料
| 型號(hào)： | 2SK3099LS |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220FI(LS), 3 PIN |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 31K |
| 代理商： | 2SK3099LS |
2SK3099LS
No.8628-3/3
PS
Case Temperature, Tc --
°C
Ambient Temperature, Ta --
°C
PD -- Tc
PD -- Ta
Allowable
Power
Dissipation,
P
D
--
W
Allowable
Power
Dissipation,
P
D
--
W
IT11685
IT11682
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
IT11684
10
1.0
23
5
7
23
5
7
2
100
35
7
0.01
0.1
2
3
5
7
2
1.0
3
5
7
2
10
3
5
7
2
3
5
7
ID=9A
DC
operation
100ms
10ms
1ms
10
s
100
s
IDP=36A
Operation in this
area is limited by RDS(on).
Tc=25
°C
Single pulse
<10s
0
2.5
2.0
1.5
1.0
0.5
160
140
120
100
80
60
40
20
0
20
40
35
25
30
20
15
10
5
60
80
100
120
140
160
0
25
50
75
100
125
150
100
80
60
20
40
120
175
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
IT10478
Ambient Temperature, Ta --
°C
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
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so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
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or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
Note on usage : Since the 2SK3099LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK30A | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR SUB:2SK30A |
| 2SK30A-GR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92 |
| 2SK30A-O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92 |
| 2SK30A-R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-92 |
| 2SK30ATM | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
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