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參數(shù)資料
| 型號(hào)： | 2SK3105-A |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINI MOLD, SC-96, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | 2SK3105-A |
1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SK3105
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
D13293EJ2V0DS00 (2nd edition)
Date Published
May 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3105 is a switching device which can be driven
directly by a 4 V power source.
The 2SK3105 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Can be driven by a 4 V power source
Low on-state resistance
RDS(on)1 = 95 m
MAX. (VGS = 10 V, ID = 1.5 A)
RDS(on)2 = 135 m
MAX. (VGS = 4.5 V, ID = 1.5 A)
RDS(on)3 = 150 m
MAX. (VGS = 4.0 V, ID = 1.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3105
SC-96 (Mini Mold Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±2.5
A
Drain Current (pulse)
Note1
ID(pulse)
±10
A
Total Power Dissipation
PT1
0.2
W
Total Power Dissipation
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board, t
≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8
±0.2
1.5
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1 –0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XA
Gate
Drain
5
相關(guān)PDF資料 |
PDF描述 |
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| 2SK3105 | 2500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3107-A | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3107 | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3109 | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3109-ZJ | 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3105-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 30V 2.5A 3-Pin Thin-Type Mini-Mold T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 30V 2.5A 3-Pin Thin-Type Mini-Mold T/R Cut Tape |
| 2SK3107 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK3107(T1-A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC75 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 0.1A 3-Pin SC-75 T/R |
| 2SK3107-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,30V,0.1A,8.0ohm,USM3 |
| 2SK3108 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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