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參數資料
| 型號： | 2SK3079A |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 2-5N1A, 4 PIN |
| 文件頁數： | 3/5頁 |
| 文件大小： | 144K |
| 代理商： | 2SK3079A |
2SK3079A
2004-12-14
3
Po (dBmW)
Gp (dB)
ηD (%)
10
0
30
20
40
15
20
25
30
10
35
0
60
10
20
30
40
50
Pi – Po, Gp, ηD
(f
= 470 MHz, Iidle = 50 mA, Vds = 4.5 V, Tc = 25°C)
Iidle – Gp, ηD
(f
= 470 MHz, Pi = 20dBmW, Vds = 4.5 V, Tc = 25°C)
Pi – Po
(f
= 470 MHz, Vds = 4.5 V, Tc = 25°C)
Pi – Ids
(f
= 470 MHz, Vds = 4.5 V, Tc = 25°C)
Vds – Gp, ηD
(f
= 470 MHz, Pi = 20dBmW, Iidle = 50 mA, Tc = 25°C)
Pi – Po
(f
= 470 MHz, Iidle = 50 mA, Tc = 25°C)
Pi (dBmW)
Iidle (mA)
Pi (dBmW)
Vds (V)
Pi (dBmW)
ηD
(%
)
G
p
(
dB
)
P
o
(
dB
m
W
),
G
p
(dB)
D
rai
nc
ur
re
nt
(A
)
P
o
(
dB
m
W
)
ηD
(%
)
P
o
(
dB
m
W
)
G
p(dB)
ηD
(%
)
13
0
15
100
50
14
17
16
Gp (dB)
ηD (%)
50
55
60
25
75
10
0
30
20
40
16
12
14
38
18
20
32
36
34
10
22
24
30
28
26
Iidle
= 50 mA
Iidle
= 30 mA
Iidle
= 70 mA
0
12
8
2
4
8
4
6
20
16
10
6
2
14
18
Gp
Eff
50
62
58
54
70
66
60
56
52
64
68
030
0
20
10
24
28
20
16
40
36
22
26
18
14
32
Vdd
= 4.5 V
Vdd
= 2.4 V
Vdd
= 3.6 V
Vdd
= 6.0 V
12
30
34
39
0.0
0
1.2
30
10
0.8
0.4
20
1.4
1.0
0.6
0.2
Iidle
= 50 mA
Iidle
= 30 mA
Iidle
= 70 mA
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| 2SK3090(2-10S1B) | 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3079A_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
| 2SK3079ATE12LQ | 制造商:Toshiba America Electronic Components 功能描述:MOSF RF N CH 10V PW-X |
| 2SK308 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 10A I(D) | TO-3 |
| 2SK3080 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3081 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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