參數(shù)資料
型號: 2SK3079A
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: 2-5N1A, 4 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 144K
代理商: 2SK3079A
2SK3079A
2004-12-14
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output power
PO
33.5
dBmW
Drain efficiency
ηD
50.0
%
Power gain
Gp
VDS = 4.5 V, Iidle = 50 mA
(VGS = adjust)
f = 470 MHz, Pi = 20dBmW
ZG = ZL = 50
13.5
dB
Threshold voltage
Vth
VDS = 4.5 V, ID = 0.5 mA
0.8
V
Drain cut-off current
IDSS
VDS = 10 V, VGS = 0 V
10
A
Gate-source leakage current
IGSS
VGS = 5 V, VDS = 0 V
5
A
Load mismatch
(Note 2)
VDS = 5 V, f = 470 MHz,
Pi = 20dBmW,
Po = 33.5dBmW (VGS = adjust)
VSWR LOAD 10:1 all phase
No degradation
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
Test Circuit
Pi
ZG = 50
10000 pF
680 k
VGS
10
F
VDS
10000 pF
2200 pF
L1
20 pF
3.3
2200 pF
13 pF
20 pF
L2
2200 pF
Po
ZL = 50
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