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參數(shù)資料
| 型號(hào)： | 2SK3076S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 2SK3076S |
2SK3076(L),2SK3076(S)
5
0
10
20
30
40
50
5000
1000
100
10
500
400
300
200
100
0
20
16
12
8
4
8
Gate Charge Qg (nc)
16
24
32
40
0
I = 7 A
V
GS
V
DS
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
5
V = 100 V
250 V
400 V
0.2
0.5
1
2
5
10
20
5000
200
500
100
2000
1000
50
di / dt = 100 A / μs
V = 0, Ta = 25 °C
PulseTest
Ciss
Coss
Crss
V = 0
f = 1 MHz
V = 400 V
250 V
100 V
0.2
0.5
1
2
5
10
20
500
20
50
10
200
100
5
V = 10 V, V = 30 V
PW = 2 μs, duty < 1 %
tf
r
d(off)
t
d(on)
t
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| 2SK3076 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3080 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3081 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082L | Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK3077 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS |
| 2SK3077_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3077A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF/UHF Band Amplifier Applications |
| 2SK3078 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3078A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
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