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參數(shù)資料
| 型號： | 2SK3065T100 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK3065T100 |
2SK3065
Transistors
0.01
10
0.1
10
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS
(on)(
)
DRAIN CURRENT : ID
(A)
0.1
1
Ta=125
°C
75
°C
25
°C
25°C
VGS
=2.5V
Pulsed
Fig.7
Static Drain-Source On-
State Resistance vs.
Drain Current(
ΙΙ)
020
0
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS
(on)(
)
GATE-SOURCE VOLTAGE : VGS
(V)
5
Ta=25
°C
Pulsed
2A
ID=1A
10
15
0.25
0.5
0.75
1
Fig.8
Static Drain-Source On-
State Resistance vs.
Gate-Source Voltage
50
150
100
0
1
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS
(on)(
)
CHANNEL TEMPERATURE : Tch(
°C)
50
25
0
0.5
25
75
125
2A
ID=1A
VGS
=4V
Pulsed
Fig.9
Static Drain-Source On-
State Resistance vs.
Channel Temperature
0.01
10
0.1
10
FORWARD
TRANSFER
ADMITTANCE
:
|
Yfs
|(S)
DRAIN CURRENT : ID
(A)
0.1
1
VDS
=10V
Pulsed
Ta=
25°C
25
°C
75
°C
125
°C
Fig.10
Forward Trasfer Admitance vs.
Drain Current
0
1.6
0.01
10
REVERSE
DRAIN
CURRENT
:
I
DR
(A)
SOURCE-DRAIN VOLTAGE : VSD
(V)
0.4
1
1.2
VGS
=4V
Pulsed
0.8
Ta=125
°C
75
°C
25
°C
25°C
0.1
Fig.11
Reverse Drain Current vs.
Source-Drain Voltage(
Ι)
0
1.6
0.01
10
REVERSE
DRAIN
CURRENT
:
I
DR
(A)
SOURCE-DRAIN VOLTAGE : VSD
(V)
0.4
1
1.2
Ta=25
°C
Pulsed
0.8
0.1
VGS=0V
4V
Fig.12
Reverse Drain Current vs.
Source-Drain Voltage(
ΙΙ)
0
100
1
1000
CAPACITANCE
:
C(pF)
DRAIN-SOURCE VOLTAGE : VSD
(V)
100
10
VGS=0V
f=1MHZ
Ta=25
°C
Coss
Crss
Ciss
Fig.13
Typical Capacitance vs.
Drain-Source Voltage
0.1
10
1000
SWITCHING
TIME
:
t(ns)
DRAIN CURRENT : ID
(A)
100
1
VDD
30
V
VGS=4V
RG=10
Ta=25
°C
Pulsed
t
f
t
d(on)
t
r
t
d(off)
Fig.14
Switching Characteristics
(a measurement circuit diagram Fig.17 , it refers 18 times)
0.1
10
1000
REVERSE
RECOVERY
TIME
:
trr(ns)
REVERSE DRAIN CURRENT : IDR
(A)
100
1
di/dt=50A/
s
VGS=0V
Ta=25
°C
Pulsed
Fig.15
Reverse Recovery Time vs.
Reverse Drain Current
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