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參數(shù)資料
| 型號： | 2SK3065T100 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 2SK3065T100 |
2SK3065
Transistors
!Packaging specifications
T100
1000
2SK3065
Type
Package
Code
Basic ordering unit
(pieces)
Taping
!Electrical characteristic curves
0
25
50
75
100
125
150
175
0
1
2
3
TOTAL
POWER
DISSIPATION
:
P
D
(W)
AMBIENT TEMPERATURE : Ta(
°C)
When mounted on a 40 x 40 x 0.7 mm
aluminum-ceramic board.
Fig.1
Total Power Dissipation vs.
Case Temperature
100
s
1ms
Pw
=10ms
DC OPERATION
0.1
1
10
100
0.001
0.1
1
10
DRAIN
CURRENT
:
I
D
(A)
DRAIN-SOURCE VOLTAGE : VDS(V)
0.01
Operating in this
area is limited by
RDS(on)
Ta=25
°C
Single Pulsed
Fig.2
Maximum Safe Operating Area
05
10
0
1
2
DRAIN
CURRENT
:
I
D
(A)
DRAIN-SOURCE VOLTAGE : VDS
(V)
VGS=1.5V
2V
4V
3.5V
3V
2.5V
Ta=25
°C
Pulsed
Fig.3
Typical Output Characteristics
05
4
0.1
1
10
DRAIN
CURRENT
:
I
D
(A)
GATE THRESHOLD VOLTAGE : VGS(th)(V)
3
2
1
Ta=
25°C
25
°C
75
°C
125
°C
VDS=10V
Pulsed
Fig.4
Typical Transfer Characteristics
50
150
100
0
1
4
GATE
THRESHOLD
VOLTAGE
:
V
GS
(th)(
V)
CHANNEL TEMPERATURE : Tch(
°C)
50
25
0
2
3
25
75
125
10mA
ID=1mA
VDS=10V
Fig.5
Gate Threshold Voltage vs.
Channel Temperature
0.01
10
0.1
10
STATIC
DRAIN-SOURCE
ON-STATE
RESISTANCE
:
R
DS
(on)(
)
DRAIN CURRENT : ID
(A)
0.1
1
Ta=125
°C
75
°C
25
°C
25°C
VGS
=4V
Pulsed
Fig.6
Static Drain-Source On-
State Resistance vs.
Drain Current(
Ι)
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