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參數(shù)資料
| 型號： | 2SK3061 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 64K |
| 代理商： | 2SK3061 |
Data Sheet D13100EJ1V0DS00
6
2SK3061
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
I
A
1.0
10
100
1
m
10
m
R
G
= 25
V
DD
= 30
V
V
= 20
V
→
0 V
Starting T
ch
= 25
°
C
10
μ
I
AS
= 35
A
100
μ
0.1
E
AS
=
122.5
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature -
C
E
25
50
75
100
160
140
120
100
80
60
40
20
0
125
150
V
DD
= 30 V
R
G
= 25
V
GS
= 20 V
→
0 V
I
AS
≤
35 A
10.0
±
0.3
3.2
±
0.2
φ
4.5
±
0.2
2.7
±
0.2
2.5
±
0.1
0.65
±
0.1
1.5
±
0.2
2.54
1.3
±
0.2
2.54
0.7
±
0.1
4
±
0
1
±
0
1
±
0
3
±
0
1
2 3
1.Gate
2.Drain
3.Source
1
M
Isolated TO-220 (MP-45F)
Body
Diode
Source (S)
Drain (D)
Gate (G)
PACKAGE DRAWING (Unit : mm)
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
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PDF描述 |
|---|---|
| 2SK3065 | Small switching (60V, 2A) |
| 2SK3069 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076L | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3061-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-220 Bulk |
| 2SK3062 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3062(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3062-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3062-Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263AB |
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