參數資料
型號: 2SK3061
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關功率場效應晶體管 工業(yè)級
文件頁數: 2/8頁
文件大?。?/td> 64K
代理商: 2SK3061
Data Sheet D13100EJ1V0DS00
2
2SK3061
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 35
A
6.3
8.5
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 35
A
8.2
12
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 35 A
20
87
S
Drain Leakage Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20
V, V
DS
= 0
V
±
10
μ
A
Input Capacitance
C
iss
V
DS
= 10
V
5200
pF
Output Capacitance
C
oss
V
GS
= 0
V
1300
pF
Reverse Transfer Capacitance
C
rss
f = 1
MHz
480
pF
Turn-on Delay Time
t
d(on)
I
D
= 35
A
75
ns
Rise Time
t
r
V
GS(on)
= 10
V
1150
ns
Turn-off Delay Time
t
d(off)
V
DD
= 30
V
360
ns
Fall Time
t
f
R
G
= 10
480
ns
Total Gate Charge
Q
G
I
D
= 70
A
95
nC
Gate to Source Charge
Q
GS
V
DD
= 48
V
13
nC
Gate to Drain Charge
Q
GD
V
GS(on)
= 10
V
30
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 70
A, V
GS
= 0
V
0.97
V
Reverse Recovery Time
t
rr
I
F
= 70
A, V
GS
= 0
V
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A
/
μ
s
140
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
0
V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
R
G
= 10
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
1 %
τ
GS
Wave Form
D
Wave Form
V
GS
I
D
10
%
0
0
90
%
90
%
90
%
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
%
10
%
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