參數(shù)資料
型號: 2SK3060-ZJ
元件分類: JFETs
英文描述: 70 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: MP-25ZJ, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 81K
代理商: 2SK3060-ZJ
Data Sheet D13099EJ3V0DS
2
2SK3060
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 35 A11
13
m
Drain to Source On-state Resistance
RDS(on)2
VGS = 4.0 V, ID = 35 A16
20
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 35 A
15
50
S
Drain Leakage Current
IDSS
VDS = 60 V, VGS = 0 V10
A
Gate to Source Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
A
Input Capacitance
Ciss
2400
pF
Output Capacitance
Coss
700
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
280
pF
Turn-on Delay Time
td(on)
30
ns
Rise Time
tr
600
ns
Turn-off Delay Time
td(off)
140
ns
Fall Time
tf
ID = 35 A
VGS = 10 V
VDD = 30 V
RG = 10
450
ns
Total Gate Charge
QG
50
nC
Gate to Source Charge
QGS
7.5
nC
Gate to Drain Charge
QGD
ID = 70 A
VDD = 48 V
VGS = 10 V
18
nC
Body Diode Forward Voltage
VF(S-D)
IF = 70 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
55
ns
Reverse Recovery Charge
Qrr
IF = 70 A, VGS = 0 V
di/dt = 100 A /
s
75
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG.
L
VDD
VGS = 20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10%
90%
10%
0
ID
90%
td(on)
tr td(off)
tf
10%
τ
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
5
相關PDF資料
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2SK3060-ZJ 70 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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