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參數(shù)資料
| 型號(hào)： | 2SK3053 |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 68K |
| 代理商： | 2SK3053 |
Data Sheet D12912EJ3V0DS
2
2SK3053
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 13 A
28
45
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 13 A
46
70
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 13 A
8.0
16
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±10
μ
A
Input Capacitance
C
iss
V
DS
= 10 V
790
pF
Output Capacitance
C
oss
V
GS
= 0 V
240
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
100
pF
Turn-on Delay Time
t
d(on)
I
D
= 13 A
20
ns
Rise Time
t
r
V
GS
= 10 V
200
ns
Turn-off Delay Time
t
d(off)
V
DD
= 30 V
65
ns
Fall Time
t
f
R
G
= 10
95
ns
Total Gate Charge
Q
G
I
D
= 25 A
20
nC
Gate to Source Charge
Q
GS
V
DD
= 48 V
3.0
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
6.5
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 25 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 25 A, V
GS
= 0 V
40
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
45
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1 %
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10 %
90 %
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
!
!
!
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3054 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3055 | Switching N-channel power MOS FET industrial use |
| 2SK3057 | Switching N-channel power MOS FET industrial use |
| 2SK3061 | Switching N-channel power MOS FET industrial use |
| 2SK3065 | Small switching (60V, 2A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3053-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220 |
| 2SK3054 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3054-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-70 T/R |
| 2SK3055 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3055-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220 Cut Tape |
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